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| PartNumber | MRF5S19150HR5 | MRF5S19150HR3 | MRF5S19150H |
| Description | RF MOSFET Transistors HV5 32W N/CDMA | RF MOSFET Transistors HV5 32W N/CDMA | L BAND, SI, N-CHANNEL, RF POWER, MOSFET |
| Manufacturer | NXP | NXP | Freescale |
| Product Category | RF MOSFET Transistors | RF MOSFET Transistors | RF FETs |
| RoHS | Y | Y | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Technology | Si | Si | - |
| Vds Drain Source Breakdown Voltage | 65 V | 65 V | - |
| Gain | 14 dB | 14 dB | - |
| Output Power | 32 W | 32 W | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | NI-880-3 | NI-880-3 | - |
| Packaging | Reel | Reel | - |
| Configuration | Single | Single | - |
| Height | 5.08 mm | 5.08 mm | - |
| Length | 34.16 mm | 34.16 mm | - |
| Operating Frequency | 1.9 GHz to 2 GHz | 1.9 GHz to 2 GHz | - |
| Type | RF Power MOSFET | RF Power MOSFET | - |
| Width | 13.8 mm | 13.8 mm | - |
| Brand | NXP / Freescale | NXP / Freescale | - |
| Channel Mode | Enhancement | Enhancement | - |
| Pd Power Dissipation | 427 W | 427 W | - |
| Product Type | RF MOSFET Transistors | RF MOSFET Transistors | - |
| Factory Pack Quantity | 50 | 250 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Vgs Gate Source Voltage | - 0.5 V, 15 V | - 0.5 V, 15 V | - |
| Vgs th Gate Source Threshold Voltage | 3.5 V | 3.5 V | - |
| Unit Weight | 0.343346 oz | 0.343346 oz | - |