MRF5S21130HR5 vs MRF5S21130HR3 vs MRF5S21130H

PartNumber	MRF5S21130HR5	MRF5S21130HR3	MRF5S21130H
Description	RF MOSFET Transistors HV5 LDMOS WCDMA NI880	RF MOSFET Transistors HV5 LDMOS WCDMA NI880
Manufacturer	NXP	NXP	-
Product Category	RF MOSFET Transistors	RF MOSFET Transistors	-
RoHS	N	N	-
Transistor Polarity	N-Channel	N-Channel	-
Technology	Si	Si	-
Id Continuous Drain Current	2.1 A	2.1 A	-
Vds Drain Source Breakdown Voltage	65 V	65 V	-
Gain	13.5 dB	13.5 dB	-
Output Power	28 W	28 W	-
Minimum Operating Temperature	- 65 C	- 65 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	NI-880-3	NI-880-3	-
Packaging	Reel	Reel	-
Configuration	Single	Single	-
Height	5.08 mm	5.08 mm	-
Length	34.16 mm	34.16 mm	-
Operating Frequency	2.11 GHz to 2.17 GHz	2.11 GHz to 2.17 GHz	-
Type	RF Power MOSFET	RF Power MOSFET	-
Width	13.8 mm	13.8 mm	-
Brand	NXP / Freescale	NXP / Freescale	-
Channel Mode	Enhancement	Enhancement	-
Pd Power Dissipation	372 W	372 W	-
Product Type	RF MOSFET Transistors	RF MOSFET Transistors	-
Factory Pack Quantity	50	250	-
Subcategory	MOSFETs	MOSFETs	-
Vgs Gate Source Voltage	- 0.5 V, 15 V	- 0.5 V, 15 V	-
Vgs th Gate Source Threshold Voltage	3.5 V	3.5 V	-
Unit Weight	0.343346 oz	0.343346 oz	-