PartNumber | MRF6V2010NBR5 | MRF6V2010NBR1 | MRF6V2010NB |
Description | RF MOSFET Transistors VHV6 10W Latrl N-Ch. Broadband MOSFET | RF MOSFET Transistors VHV6 10W TO272-2N | |
Manufacturer | NXP | NXP | - |
Product Category | RF MOSFET Transistors | RF MOSFET Transistors | - |
RoHS | E | E | - |
Transistor Polarity | N-Channel | N-Channel | - |
Technology | Si | Si | - |
Vds Drain Source Breakdown Voltage | 110 V | 110 V | - |
Minimum Operating Temperature | - 65 C | - 65 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-272-3 | TO-272-3 | - |
Packaging | Reel | Reel | - |
Configuration | Single | Single | - |
Height | 2.64 mm | 2.64 mm | - |
Length | 23.67 mm | 23.67 mm | - |
Series | MRF6V2010N | MRF6V2010N | - |
Type | RF Power MOSFET | RF Power MOSFET | - |
Width | 6.4 mm | 6.4 mm | - |
Brand | NXP / Freescale | NXP / Freescale | - |
Channel Mode | Enhancement | Enhancement | - |
Moisture Sensitive | Yes | Yes | - |
Product Type | RF MOSFET Transistors | RF MOSFET Transistors | - |
Factory Pack Quantity | 50 | 500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Vgs Gate Source Voltage | - 5 V, 10 V | - 5 V, 10 V | - |
Unit Weight | 0.042191 oz | 0.042191 oz | - |
Part # Aliases | - | 935319274528 | - |