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| PartNumber | MRF8S21100HR3 | MRF8S21100HR5 | MRF8S21100HS |
| Description | RF MOSFET Transistors HV8 2.1GHZ 100W | FET RF 65V 2.17GHZ NI780H | |
| Manufacturer | NXP | - | - |
| Product Category | RF MOSFET Transistors | - | - |
| RoHS | Y | - | - |
| Transistor Polarity | N-Channel | - | - |
| Technology | Si | - | - |
| Vds Drain Source Breakdown Voltage | 65 V | - | - |
| Gain | 18.3 dB | - | - |
| Output Power | 24 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | NI-780 | - | - |
| Packaging | Reel | - | - |
| Configuration | Single | - | - |
| Operating Frequency | 2.11 GHz to 2.17 GHz | - | - |
| Series | MRF8S21100H | - | - |
| Brand | NXP / Freescale | - | - |
| Product Type | RF MOSFET Transistors | - | - |
| Factory Pack Quantity | 250 | - | - |
| Subcategory | MOSFETs | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Unit Weight | 0.226635 oz | - | - |