MUBW50-12A8 vs MUBW50-12 vs MUBW50-12-E8

 
PartNumberMUBW50-12A8MUBW50-12MUBW50-12-E8
DescriptionDiscrete Semiconductor Modules 50 Amps 1200V
ManufacturerIXYSIXYS-
Product CategoryDiscrete Semiconductor ModulesModule-
RoHSY--
ProductPower Semiconductor ModulesPower Semiconductor Modules-
TypeConverter/Brake/InverterConverter/Brake/Inv (CBI) IGBT Modules-
Vf Forward Voltage1.1 V--
Vr Reverse Voltage1.6 kV--
Mounting StyleScrew MountScrew-
Package / CaseE3--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
SeriesMUBW50MUBW50-
PackagingBulkBulk-
BrandIXYS--
Product TypeDiscrete Semiconductor Modules--
Factory Pack Quantity5--
SubcategoryDiscrete Semiconductor Modules--
Unit Weight10.652736 oz--
Operating Temperature Range-- 40 C to + 125 C-
Package Case-E3-
Mounting Type-Chassis Mount-
Supplier Device Package-E3-
Input-Three Phase Bridge Rectifier-
Configuration-Three Phase Inverter with Brake-
Power Max-350W-
Current Collector Ic Max-85A-
Voltage Collector Emitter Breakdown Max-1200V-
Current Collector Cutoff Max-3.7mA-
IGBT Type-NPT-
Vce on Max Vge Ic-2.6V @ 15V, 50A-
Input Capacitance Cies Vce-3.3nF @ 25V-
NTC Thermistor-Yes-
Vf Forward Voltage-1.1 V-
Vr Reverse Voltage-1.6 kV-
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