MUN2131T1G vs MUN2130T1G vs MUN2130T1

 
PartNumberMUN2131T1GMUN2130T1GMUN2130T1
DescriptionBipolar Transistors - Pre-Biased 100mA 50V BRT PNPBipolar Transistors - Pre-Biased 100mA 50V BRT PNPBipolar Transistors - Pre-Biased 100mA 50V BRT PNP
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-Biased
RoHSYYN
ConfigurationSingleSingleSingle
Transistor PolarityPNPPNPPNP
Typical Input Resistor2.2 kOhms1 kOhms1 kOhms
Typical Resistor Ratio111
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSC-59-3SC-59-3SC-59-3
DC Collector/Base Gain hfe Min833
Collector Emitter Voltage VCEO Max50 V50 V50 V
Continuous Collector Current0.1 A0.1 A0.1 A
Peak DC Collector Current100 mA100 mA100 mA
Pd Power Dissipation230 mW230 mW230 mW
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesMUN2131MUN2130-
PackagingReelReelReel
DC Current Gain hFE Max833
Height1.09 mm1.09 mm1.09 mm
Length2.9 mm2.9 mm2.9 mm
Width1.5 mm1.5 mm1.5 mm
BrandON SemiconductorON SemiconductorON Semiconductor
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity300030003000
SubcategoryTransistorsTransistorsTransistors
Unit Weight0.000282 oz0.000282 oz0.000282 oz
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