MWI75-06A7 vs MWI75-06A7T vs MWI75-06

 
PartNumberMWI75-06A7MWI75-06A7TMWI75-06
DescriptionDiscrete Semiconductor Modules 75 Amps 600VIGBT Modules 75 Amps 600V
ManufacturerIXYSIXYSIXYS
Product CategoryDiscrete Semiconductor ModulesIGBT ModulesModule
RoHSYY-
ProductPower Semiconductor ModulesIGBT Silicon ModulesPower Semiconductor Modules
TypeSix-Pack-Six-Pack IGBT Modules
Vf Forward Voltage1.8 V--
Mounting StyleScrew MountChassis MountScrew
Package / CaseE2E2-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMWI75MWI75MWI75
PackagingBulkBulkBulk
BrandIXYSIXYS-
Product TypeDiscrete Semiconductor ModulesIGBT Modules-
Factory Pack Quantity66-
SubcategoryDiscrete Semiconductor ModulesIGBTs-
Configuration-HexThree Phase Inverter
Collector Emitter Voltage VCEO Max-600 V-
Continuous Collector Current at 25 C-90 A-
Height-17 mm-
Length-107.5 mm-
Width-45 mm-
Maximum Gate Emitter Voltage-20 V-
Operating Temperature Range--- 40 C to + 150 C
Package Case--E2
Mounting Type--Chassis Mount
Supplier Device Package--E2
Input--Standard
Power Max--280W
Current Collector Ic Max--90A
Voltage Collector Emitter Breakdown Max--600V
Current Collector Cutoff Max--1.3mA
IGBT Type--NPT
Vce on Max Vge Ic--2.6V @ 15V, 75A
Input Capacitance Cies Vce--3.2nF @ 25V
NTC Thermistor--No
Vf Forward Voltage--1.8 V
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