PartNumber | NE3508M04-T2-A | NE3508M04-T2 | NE3508M04-T2-A/79 |
Description | |||
Manufacturer | RENESAS | - | - |
Product Category | RF FETs | - | - |
Packaging | Reel | - | - |
Mounting Style | SMD/SMT | - | - |
Package Case | FTSMM-4 (M04) | - | - |
Technology | GaAs | - | - |
Transistor Type | HFET | - | - |
Gain | 14 dB | - | - |
Pd Power Dissipation | 175 mW | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Operating Frequency | 2 GHz | - | - |
Id Continuous Drain Current | 120 mA | - | - |
Vds Drain Source Breakdown Voltage | 4 V | - | - |
Transistor Polarity | N-Channel | - | - |
Forward Transconductance Min | 100 mS | - | - |
Vgs Gate Source Breakdown Voltage | - 3 V | - | - |
NF Noise Figure | 0.45 dB | - | - |
P1dB Compression Point | 18 dBm | - | - |