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| PartNumber | NE3514S02-T1C-A(K) | NE3514S02-T1C-A | NE3514S02-T1C |
| Description | RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, K BAND, SILICON, N-CHANNEL, HETERO-JUNCTION FET | RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET | |
| Manufacturer | - | CEL | - |
| Product Category | - | Transistors - FETs, MOSFETs - Single | - |
| Packaging | - | Reel | - |
| Mounting Style | - | SMD/SMT | - |
| Package Case | - | S0-2 | - |
| Technology | - | GaAs | - |
| Transistor Type | - | pHEMT | - |
| Gain | - | 10 dB | - |
| Pd Power Dissipation | - | 165 mW | - |
| Maximum Operating Temperature | - | + 125 C | - |
| Operating Frequency | - | 20 GHz | - |
| Id Continuous Drain Current | - | 70 mA | - |
| Vds Drain Source Breakdown Voltage | - | 4 V | - |
| Forward Transconductance Min | - | 55 mS | - |
| Vgs Gate Source Breakdown Voltage | - | - 3 V | - |
| NF Noise Figure | - | 0.75 dB | - |