NE662M04-T2-A vs NE662M04-T2-A (T79)(2SC vs NE662M04-T2-A/T79

 
PartNumberNE662M04-T2-ANE662M04-T2-A (T79)(2SCNE662M04-T2-A/T79
DescriptionRF Bipolar Transistors NPN High Frequency
ManufacturerCEL--
Product CategoryRF Bipolar Transistors--
RoHSY--
Transistor TypeBipolar--
TechnologySi--
Transistor PolarityNPN--
Collector Emitter Voltage VCEO Max3.3 V--
Emitter Base Voltage VEBO1.5 V--
Continuous Collector Current35 mA--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
ConfigurationSingle--
Mounting StyleSMD/SMT--
Package / CaseMiniMold-Flat-4--
PackagingReel--
DC Current Gain hFE Max100--
Height0.59 mm--
Length2 mm--
Operating Frequency2 GHz--
TypeRF Bipolar Small Signal--
Width1.25 mm--
BrandCEL--
Gain Bandwidth Product fT25 GHz--
Pd Power Dissipation115 W--
Product TypeRF Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # Aliases2SC5508-T2-A--
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