PartNumber | NE678M04-A | NE678M04-EV09 | NE678M04 |
Description | RF Bipolar Transistors NPN High Frequency | RF Development Tools For NE678M04-A at 900 MHz | RF Bipolar Transistors NPN High Frequency |
Manufacturer | CEL | CEL | - |
Product Category | RF Bipolar Transistors | RF Development Tools | - |
RoHS | Y | N | - |
Transistor Type | Bipolar | - | - |
Technology | Si | - | - |
Transistor Polarity | NPN | - | - |
Collector Emitter Voltage VCEO Max | 6 V | - | - |
Emitter Base Voltage VEBO | 2 V | - | - |
Continuous Collector Current | 0.1 A | - | - |
Minimum Operating Temperature | - 65 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Configuration | Single | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-343 | - | - |
DC Current Gain hFE Max | 150 | - | - |
Operating Frequency | 1.8 GHz | - | - |
Type | RF Bipolar Small Signal | - | - |
Brand | CEL | CEL | - |
Gain Bandwidth Product fT | 12 GHz | - | - |
Pd Power Dissipation | 205 mW | - | - |
Product Type | RF Bipolar Transistors | RF Development Tools | - |
Factory Pack Quantity | 1 | 1 | - |
Subcategory | Transistors | Development Tools | - |