NE68133-T1B-A vs NE68133-T1B-R33-A vs NE68133-T1B

 
PartNumberNE68133-T1B-ANE68133-T1B-R33-ANE68133-T1B
DescriptionRF Bipolar Transistors NPN High FrequencyRF Bipolar Transistors NPN Silicon AMP Oscilltr TransistRF Bipolar Transistors NPN High Frequency
ManufacturerCELCELCEL
Product CategoryRF Bipolar TransistorsRF Bipolar TransistorsTransistors - Bipolar (BJT) - RF
RoHSYY-
Transistor TypeBipolarBipolarNPN
TechnologySiSiSi
Transistor PolarityNPN-NPN
Continuous Collector Current0.065 A-0.065 A
ConfigurationSingleSingleSingle
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-23-3--
PackagingReelReelDigi-ReelR Alternate Packaging
Height1.1 mm--
Length2.9 mm--
TypeRF Bipolar Small SignalRF Bipolar Small Signal-
Width1.5 mm--
BrandCELCEL-
Pd Power Dissipation200 mW (1/5 W)--
Product TypeRF Bipolar TransistorsRF Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Part # Aliases2SC3583-T1B-A--
Unit Weight0.000282 oz-0.050717 oz
Series---
Part Aliases--2SC3583-T1B-A
Package Case--TO-236-3, SC-59, SOT-23-3
Mounting Type--Surface Mount
Supplier Device Package--SOT-23
Power Max--200mW
Current Collector Ic Max--65mA
Voltage Collector Emitter Breakdown Max--10V
DC Current Gain hFE Min Ic Vce--50 @ 20mA, 8V
Frequency Transition--9GHz
Noise Figure dB Typ f--1.2dB @ 1GHz
Gain--13dB
Pd Power Dissipation--0.2 W
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