NE68819-A vs NE68819 vs NE68819-T1-A

 
PartNumberNE68819-ANE68819NE68819-T1-A
DescriptionRF Bipolar Transistors NPN High FrequencyRF Bipolar Transistors NPN High FrequencyRF TRANS NPN 6V 5GHZ 3SMINIMOLD
ManufacturerCEL-RENESAS
Product CategoryRF Bipolar Transistors-RF Transistors (BJT)
RoHSY--
Transistor TypeBipolar-NPN
TechnologySi--
Transistor PolarityNPN--
DC Collector/Base Gain hfe Min70--
Collector Emitter Voltage VCEO Max6 V--
Emitter Base Voltage VEBO2 V--
Continuous Collector Current0.1 A--
ConfigurationSingle--
Mounting StyleSMD/SMT--
PackagingBulk-Digi-ReelR
DC Current Gain hFE Max140--
TypeRF Bipolar Small Signal--
BrandCEL--
Pd Power Dissipation125 mW (1/8 W)--
Product TypeRF Bipolar Transistors--
Factory Pack Quantity420--
SubcategoryTransistors--
Series---
Package Case--SOT-523
Mounting Type--Surface Mount
Supplier Device Package--3-SuperMiniMold (19)
Power Max--125mW
Current Collector Ic Max--100mA
Voltage Collector Emitter Breakdown Max--6V
DC Current Gain hFE Min Ic Vce--80 @ 3mA, 1V
Frequency Transition--5GHz
Noise Figure dB Typ f--1.7dB ~ 2.5dB @ 2GHz
Gain---
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