NE696M01-T1 vs NE696M01-A vs NE696M01

 
PartNumberNE696M01-T1NE696M01-ANE696M01
DescriptionRF Bipolar Transistors DISC BY CEL 1/02 M01 NPN HIGH FREQRF Bipolar Transistors NPN Silicon Amp Oscillatr Transistor
ManufacturerCELCELCEL
Product CategoryRF Bipolar TransistorsRF Bipolar TransistorsTransistors - Bipolar (BJT) - RF
RoHSNY-
Transistor TypeBipolarBipolarNPN
TechnologySiSi-
Transistor PolarityNPNNPN-
Emitter Base Voltage VEBO2 V2 V-
Continuous Collector Current0.03 A0.03 A-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
ConfigurationSingleSingle-
PackagingReel-Bulk
Collector Base Voltage VCBO9 V9 V-
DC Current Gain hFE Max80 at 10 mA at 3 V80 at 10 mA at 3 V-
Operating Frequency14000 MHz (Typ)14000 MHz (Typ)-
TypeRF Bipolar Small SignalRF Bipolar Small Signal-
BrandCELCEL-
Pd Power Dissipation150 mW150 mW-
Product TypeRF Bipolar TransistorsRF Bipolar Transistors-
Factory Pack Quantity3000170-
SubcategoryTransistorsTransistors-
Series---
Package Case--6-TSSOP, SC-88, SOT-363
Mounting Type--Surface Mount
Supplier Device Package--SOT-363
Power Max--150mW
Current Collector Ic Max--30mA
Voltage Collector Emitter Breakdown Max--6V
DC Current Gain hFE Min Ic Vce--80 @ 10mA, 3V
Frequency Transition--14GHz
Noise Figure dB Typ f--1.6dB @ 2GHz
Gain---
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