NGB8207ABNT4G vs NGB8207ABNG vs NGB8207AN

 
PartNumberNGB8207ABNT4GNGB8207ABNGNGB8207AN
DescriptionIGBT Transistors 365V 20A IGBT IGNITION
ManufacturerLittelfuse-ON Semiconductor
Product CategoryIGBT Transistors-IGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-263-3--
Mounting StyleSMD/SMT--
Collector Emitter Voltage VCEO Max365 V--
Maximum Gate Emitter Voltage15 V--
Continuous Collector Current at 25 C20 A--
Pd Power Dissipation165 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
SeriesNGB8207AB--
PackagingReel-Tape & Reel (TR)
BrandLittelfuse--
Product TypeIGBT Transistors--
Factory Pack Quantity800--
SubcategoryIGBTs--
Package Case--TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Input Type--Logic
Mounting Type--Surface Mount
Supplier Device Package--D2PAK
Power Max--165W
Reverse Recovery Time trr---
Current Collector Ic Max--20A
Voltage Collector Emitter Breakdown Max--365V
IGBT Type---
Current Collector Pulsed Icm--50A
Vce on Max Vge Ic--2.2V @ 3.7V, 10A
Switching Energy---
Gate Charge---
Td on off 25°C---
Test Condition---
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