NGD8205ANT4G vs NGD8205N vs NGD8205NT4

 
PartNumberNGD8205ANT4GNGD8205NNGD8205NT4
DescriptionIGBT Transistors 350V 20A IGBT N-CHANNELIGBT 390V 20A 125W DPAK
ManufacturerLittelfuseON SemiconductorON Semiconductor
Product CategoryIGBT TransistorsIGBTs - SingleIGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-252-3--
Mounting StyleSMD/SMT--
Collector Emitter Voltage VCEO Max390 V--
Maximum Gate Emitter Voltage15 V--
Continuous Collector Current at 25 C20 A--
Pd Power Dissipation125 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
SeriesNGD8205A--
PackagingReelTape & Reel (TR)Tape & Reel (TR)
BrandLittelfuse--
Product TypeIGBT Transistors--
Factory Pack Quantity2500--
SubcategoryIGBTs--
Package Case-TO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63
Input Type-LogicLogic
Mounting Type-Surface MountSurface Mount
Supplier Device Package-DPAK-3DPAK-3
Power Max-125W125W
Reverse Recovery Time trr---
Current Collector Ic Max-20A20A
Voltage Collector Emitter Breakdown Max-390V390V
IGBT Type---
Current Collector Pulsed Icm-50A50A
Vce on Max Vge Ic-1.9V @ 4.5V, 20A1.9V @ 4.5V, 20A
Switching Energy---
Gate Charge---
Td on off 25°C--/5μs-/5μs
Test Condition-300V, 9A, 1 kOhm, 5V300V, 9A, 1 kOhm, 5V
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