NJVMJD3055T4G vs NJVMJD31CRLG vs NJVMJD31CG

 
PartNumberNJVMJD3055T4GNJVMJD31CRLGNJVMJD31CG
DescriptionBipolar Transistors - BJT BIP DPAK NPN 10A 60V TRBipolar Transistors - BJT BIP DPAK NPN 3A 100V TRBipolar Transistors - BJT BIP DPAK NPN 3A 100V
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTBipolar Transistors - BJT
RoHSYYY
SeriesMJD3055MJD31MJD31
PackagingReelReelTube
BrandON SemiconductorON SemiconductorON Semiconductor
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
QualificationAEC-Q101AEC-Q101AEC-Q101
Factory Pack Quantity2500180075
SubcategoryTransistorsTransistorsTransistors
Unit Weight0.012381 oz-0.012381 oz
Mounting Style--SMD/SMT
Package / Case--DPAK-3
Transistor Polarity--NPN
Configuration--Single
Collector Emitter Voltage VCEO Max--100 V
Collector Base Voltage VCBO--100 V
Emitter Base Voltage VEBO--5 V
Collector Emitter Saturation Voltage--1.2 V
Maximum DC Collector Current--5 A
Gain Bandwidth Product fT--3 MHz
Minimum Operating Temperature--- 65 C
Maximum Operating Temperature--+ 150 C
Continuous Collector Current--3 A
Pd Power Dissipation--15 W
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