NJVMJD41CT4G vs NJVMJD41CT4G-VF01 vs NJVMJD41CT4G/MJD42C

 
PartNumberNJVMJD41CT4GNJVMJD41CT4G-VF01NJVMJD41CT4G/MJD42C
DescriptionBipolar Transistors - BJT BIP NPN 6A 100V TRTRANS NPN 100V 6A DPAK-4
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max100 V--
Collector Base Voltage VCBO100 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage1.5 V--
Gain Bandwidth Product fT3 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesMJD41C--
DC Current Gain hFE Max75--
PackagingReel--
BrandON Semiconductor--
Continuous Collector Current6 A--
DC Collector/Base Gain hfe Min15--
Pd Power Dissipation1.75 W--
Product TypeBJTs - Bipolar Transistors--
QualificationAEC-Q101--
Factory Pack Quantity2500--
SubcategoryTransistors--
Part # AliasesNJVMJD41CT4G-VF01--
Unit Weight0.011993 oz--
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