NJVMJD44H11T4G vs NJVMJD44H11T4 vs NJVMJD44H11T4G-VF01

 
PartNumberNJVMJD44H11T4GNJVMJD44H11T4NJVMJD44H11T4G-VF01
DescriptionBipolar Transistors - BJT SILICON Pwr TRANSISTORTrans GP BJT NPN 80V 8A Automotive 3-Pin(2+Tab) DPAKTRANS NPN 80V 8A DPAK-4
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single, Pre-Biased-
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max80 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage1 V--
Maximum DC Collector Current16 A--
Gain Bandwidth Product fT85 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMJD44H11--
DC Current Gain hFE Max60 at 2 A, 1 V--
Height2.38 mm--
Length6.73 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width6.22 mm--
BrandON Semiconductor--
Continuous Collector Current8 A--
DC Collector/Base Gain hfe Min60--
Pd Power Dissipation20 W--
Product TypeBJTs - Bipolar Transistors--
QualificationAEC-Q101--
Factory Pack Quantity2500--
SubcategoryTransistors--
Part # AliasesNJVMJD44H11T4G-VF01--
Package Case-TO-252-3, DPak (2 Leads + Tab), SC-63-
Mounting Type-Surface Mount-
Supplier Device Package-DPAK-3-
Power Max-1.75W-
Transistor Type-NPN-
Current Collector Ic Max-8A-
Voltage Collector Emitter Breakdown Max-80V-
DC Current Gain hFE Min Ic Vce-40 @ 4A, 1V-
Vce Saturation Max Ib Ic-1V @ 400mA, 8A-
Current Collector Cutoff Max-1μA-
Frequency Transition-85MHz-
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