PBSS306NX,115 vs PBSS306NX vs PBSS306NZ

 
PartNumberPBSS306NX,115PBSS306NXPBSS306NZ
DescriptionBipolar Transistors - BJT TRANS BISS TAPE-7
ManufacturerNexperia-NXP Semiconductors
Product CategoryBipolar Transistors - BJT-Transistors (BJT) - Single
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseUPAK-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max100 V--
Collector Base Voltage VCBO100 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current4.5 A--
Gain Bandwidth Product fT110 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Height1.6 mm--
Length4.6 mm--
PackagingReel-Digi-ReelR Alternate Packaging
Width2.6 mm--
BrandNexperia--
Pd Power Dissipation2100 mW--
Product TypeBJTs - Bipolar Transistors--
QualificationAEC-Q101--
Factory Pack Quantity1000--
SubcategoryTransistors--
Part # AliasesPBSS306NX T/R--
Series---
Package Case--TO-261-4, TO-261AA
Mounting Type--Surface Mount
Supplier Device Package--SC-73
Power Max--2W
Transistor Type--NPN
Current Collector Ic Max--5.1A
Voltage Collector Emitter Breakdown Max--100V
DC Current Gain hFE Min Ic Vce--100 @ 2A, 2V
Vce Saturation Max Ib Ic--300mV @ 255mA, 5.1A
Current Collector Cutoff Max--100nA (ICBO)
Frequency Transition--110MHz
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