PBSS4032SP,115 vs PBSS4032SPN,115 vs PBSS4032SP

 
PartNumberPBSS4032SP,115PBSS4032SPN,115PBSS4032SP
DescriptionBipolar Transistors - BJT Dual PNP -30V -4.8A 0.73W 115MHzBipolar Transistors - BJT Dual +/-30V '+5.7A -5.7A 0.73W 140MHzTRANSISTOR,PNP/PNP,30V,SO8, Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:-30V, Power Dissipation Pd:2.3W, DC Collector Current:-4.8A, DC Current Gain hFE:200hFE, No. of Pins:8Pins
ManufacturerNexperiaNexperia-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8SO-8-
Transistor PolarityPNPNPN, PNP-
ConfigurationDualDual-
Collector Emitter Voltage VCEO Max- 30 V30 V-
Emitter Base Voltage VEBO- 5 V5 V-
Gain Bandwidth Product fT115 MHz140 MHz-
PackagingReelReel-
BrandNexperiaNexperia-
Continuous Collector Current- 4.8 A5.7 A-
DC Collector/Base Gain hfe Min200300-
Pd Power Dissipation730 mW730 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity10001000-
SubcategoryTransistorsTransistors-
Unit Weight0.017870 oz0.017870 oz-
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