PBSS4160DPN,115 vs PBSS4160DPN vs PBSS4160DPN T/R

 
PartNumberPBSS4160DPN,115PBSS4160DPNPBSS4160DPN T/R
DescriptionBipolar Transistors - BJT LO VCESAT(BISS)TRANSBipolar Transistors - BJT LO VCESAT(BISS)TRANS TAPE-7
ManufacturerNexperia--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSC-74-6--
Transistor PolarityNPN, PNP--
ConfigurationDual--
Collector Emitter Voltage VCEO Max60 V--
Collector Base Voltage VCBO80 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current2 A--
Gain Bandwidth Product fT185 MHz, 220 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
DC Current Gain hFE Max250 at 1 mA, 5 V--
Height1 mm--
Length3.1 mm--
PackagingReel--
Width1.7 mm--
BrandNexperia--
Continuous Collector Current1 A, - 900 mA--
Pd Power Dissipation290 mW, 420 mW--
Product TypeBJTs - Bipolar Transistors--
QualificationAEC-Q101--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # AliasesPBSS4160DPN T/R--
Unit Weight0.000394 oz--
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