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| PartNumber | PBSS4350Z,135 | PBSS4350Z | PBSS4350Z , G675L240T1U |
| Description | Bipolar Transistors - BJT NPN 50V 3A | SMALL SIGNAL BIPOLAR TRANSISTOR, 3A I(C), 50V V(BR)CEO, 1-ELEMENT, NPN, SILICON | |
| Manufacturer | Nexperia | NXP | - |
| Product Category | Bipolar Transistors - BJT | IC Chips | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-223-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Collector Base Voltage VCBO | 60 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Maximum DC Collector Current | 3 A | - | - |
| Gain Bandwidth Product fT | 100 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| DC Current Gain hFE Max | 200 at 500 mA, 2 V | - | - |
| Height | 1.7 mm | - | - |
| Length | 6.7 mm | - | - |
| Packaging | Reel | - | - |
| Width | 3.7 mm | - | - |
| Brand | Nexperia | - | - |
| DC Collector/Base Gain hfe Min | 200 at 500 mA, 2 V | - | - |
| Pd Power Dissipation | 2000 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | /T3 PBSS4350Z | - | - |
| Unit Weight | 0.006632 oz | - | - |