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| PartNumber | PBSS5130QAZ | PBSS5130PAP,115 | PBSS5130QA147 |
| Description | Bipolar Transistors - BJT 30 V, 1A PNP low VCE sat (BISS) transi | Bipolar Transistors - BJT 30V 1A PNP/PNP lo VCEsat transistor | - Bulk (Alt: PBSS5130QA147) |
| Manufacturer | Nexperia | Nexperia | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Package / Case | DFN-1010D-3 | DFN-2020-6 | - |
| Packaging | Reel | Reel | - |
| Brand | Nexperia | Nexperia | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Factory Pack Quantity | 5000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Mounting Style | - | SMD/SMT | - |
| Transistor Polarity | - | PNP | - |
| Configuration | - | Dual | - |
| Collector Emitter Voltage VCEO Max | - | - 30 V | - |
| Collector Base Voltage VCBO | - | - 30 V | - |
| Emitter Base Voltage VEBO | - | - 7 V | - |
| Collector Emitter Saturation Voltage | - | - 85 mV | - |
| Maximum DC Collector Current | - | - 2 A | - |
| Gain Bandwidth Product fT | - | 125 MHz | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| DC Current Gain hFE Max | - | 350 | - |
| Continuous Collector Current | - | - 1 A | - |
| DC Collector/Base Gain hfe Min | - | 250 | - |
| Pd Power Dissipation | - | 1450 mW | - |