PD55015-E vs PD55015 vs PD55015S

 
PartNumberPD55015-EPD55015PD55015S
DescriptionRF MOSFET Transistors POWER RF TransistorRF MOSFET Transistors N-Ch 40 Volt 5 AmpRF MOSFET Transistors N-Ch 40 Volt 5 Amp
ManufacturerSTMicroelectronicsST-
Product CategoryRF MOSFET TransistorsRF FETs-
RoHSY--
Transistor PolarityN-ChannelN-Channel-
TechnologySiSi-
Id Continuous Drain Current5 A--
Vds Drain Source Breakdown Voltage40 V--
Gain14 dB14 dB at 500 MHz-
Output Power15 W15 W-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerSO-10RF-Formed-4--
PackagingTubeTube-
ConfigurationSingle--
Height3.5 mm--
Length7.5 mm--
Operating Frequency1 GHz1 GHz-
SeriesPD55015-EPD55015-E-
TypeRF Power MOSFETRF Power MOSFET-
Width9.4 mm--
BrandSTMicroelectronics--
Forward Transconductance Min2.5 S--
Channel ModeEnhancement--
Moisture SensitiveYes--
Pd Power Dissipation73 W--
Product TypeRF MOSFET Transistors--
Factory Pack Quantity400--
SubcategoryMOSFETs--
Vgs Gate Source Voltage20 V--
Unit Weight0.105822 oz--
Package Case-PowerSO-10RF (Formed Lead)-
Pd Power Dissipation-73 W-
Vgs Gate Source Voltage-+/- 20 V-
Id Continuous Drain Current-5 A-
Vds Drain Source Breakdown Voltage-40 V-
Forward Transconductance Min-2.5 S-
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