PD57006S-E vs PD57006S vs PD57006STR

 
PartNumberPD57006S-EPD57006SPD57006STR
DescriptionRF MOSFET Transistors POWER R.F.RF MOSFET Transistors N-Ch 65 Volt 1.0 Amp
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryRF MOSFET TransistorsRF MOSFET TransistorsTransistors - FETs, MOSFETs - Single
RoHSYN-
Transistor PolarityN-ChannelN-ChannelN-Channel
TechnologySiSiSi
Id Continuous Drain Current1 A1 A-
Vds Drain Source Breakdown Voltage65 V65 V-
Gain15 dB15 dB15 dB at 945 MHz
Output Power6 W6 W6 W
Minimum Operating Temperature- 65 C- 65 C- 65 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerSO-10RF-Straight-4PowerSO-10RF-Straight-4-
PackagingTubeTubeReel
ConfigurationSingleSingle-
Height3.5 mm3.5 mm-
Length7.5 mm7.5 mm-
Operating Frequency1 GHz1 GHz1 GHz
SeriesPD57006-EPD57006PD57006-E
TypeRF Power MOSFETRF Power MOSFETRF Power MOSFET
Width9.4 mm9.4 mm-
BrandSTMicroelectronicsSTMicroelectronics-
Channel ModeEnhancementEnhancement-
Moisture SensitiveYes--
Pd Power Dissipation20 W20 W-
Product TypeRF MOSFET TransistorsRF MOSFET Transistors-
Factory Pack Quantity40050-
SubcategoryMOSFETsMOSFETs-
Vgs Gate Source Voltage20 V20 V-
Unit Weight0.105822 oz0.105822 oz-
Package Case--PowerSO-10RF (Straight Lead)
Pd Power Dissipation--20 W
Vgs Gate Source Voltage--+/- 20 V
Id Continuous Drain Current--1 A
Vds Drain Source Breakdown Voltage--65 V
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