PD84006-E vs PD84006 vs PD84006L

 
PartNumberPD84006-EPD84006PD84006L
DescriptionRF MOSFET Transistors RF Power Transistor LdmoST N-ch Plastic
ManufacturerSTMicroelectronics-STMicroelectronics
Product CategoryRF MOSFET Transistors-Transistors - FETs, MOSFETs - Single
RoHSY--
Transistor PolarityN-Channel-N-Channel
TechnologySi-Si
Id Continuous Drain Current5 A--
Vds Drain Source Breakdown Voltage25 V--
Gain13 dB-13 dB at 870 MHz
Output Power6 W-6 W
Maximum Operating Temperature+ 150 C-+ 150 C
Mounting StyleSMD/SMT-SMD/SMT
Package / CasePowerSO-10RF-Formed-4--
PackagingTube-Reel
ConfigurationSingle--
Operating Frequency1 GHz-1 GHz
SeriesPD84006-E-PD84006L-E
TypeRF Power MOSFET-RF Power MOSFET
BrandSTMicroelectronics--
Moisture SensitiveYes--
Pd Power Dissipation59 W--
Product TypeRF MOSFET Transistors--
Factory Pack Quantity400--
SubcategoryMOSFETs--
Vgs Gate Source Voltage15 V--
Unit Weight0.105822 oz--
Package Case--PowerFLAT (5x5)
Pd Power Dissipation--31 W
Minimum Operating Temperature--- 65 C
Vgs Gate Source Voltage--15 V
Id Continuous Drain Current--5 A
Vds Drain Source Breakdown Voltage--25 V
Top