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| PartNumber | PHE13009,127 | PHE13009 | PHE13009/DG127 |
| Description | Bipolar Transistors - BJT RAIL PWR-MOS | Bipolar Transistors - BJT RAIL PWR-MOS | |
| Manufacturer | WeEn Semiconductors | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220AB-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 400 V | - | - |
| Collector Base Voltage VCBO | 700 V | - | - |
| Collector Emitter Saturation Voltage | 0.32 V | - | - |
| Maximum DC Collector Current | 12 A | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| DC Current Gain hFE Max | 40 | - | - |
| Height | 9.4 mm | - | - |
| Length | 10.3 mm | - | - |
| Width | 4.7 mm | - | - |
| Brand | WeEn Semiconductors | - | - |
| DC Collector/Base Gain hfe Min | 8 | - | - |
| Pd Power Dissipation | 80 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | 934055576127 | - | - |
| Unit Weight | 0.211644 oz | - | - |