PMBT3946VPN,115 vs PMBT3946DW1T1 vs PMBT3946VPN

 
PartNumberPMBT3946VPN,115PMBT3946DW1T1PMBT3946VPN
DescriptionBipolar Transistors - BJT GENERAL PURPOSE TRANSISTORTRANSISTOR, NPN/PNP, 40V, 200MA, SOT666, Transistor Polarity:NPN, PNP, Collector Emitter Voltage V(br)ceo:40V, Transition Frequency ft:300MHz, Power Dissipation Pd:360mW, DC Collector Current:200
ManufacturerNexperia-NXP
Product CategoryBipolar Transistors - BJT-Transistors (BJT) - Arrays
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-666-6--
Transistor PolarityNPN, PNP--
ConfigurationDual--
Collector Emitter Voltage VCEO Max40 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO6 V--
Maximum DC Collector Current200 mA--
Gain Bandwidth Product fT300 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
DC Current Gain hFE Max60 at 100 uA, 1 V--
Height0.6 mm--
Length1.7 mm--
PackagingReel--
Width1.3 mm--
BrandNexperia--
Continuous Collector Current200 mA--
DC Collector/Base Gain hfe Min180--
Pd Power Dissipation240 mW--
Product TypeBJTs - Bipolar Transistors--
QualificationAEC-Q101--
Factory Pack Quantity4000--
SubcategoryTransistors--
Unit Weight0.000095 oz--
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