PMDPB70XP,115 vs PMDPB70XPE vs PMDPB70XP

 
PartNumberPMDPB70XP,115PMDPB70XPEPMDPB70XP
DescriptionMOSFET P-Chan -30V -3.8ANow Nexperia PMDPB70XPE - Small Signal Field-Effect Transisto
ManufacturerNexperiaNXP SemiconductorsNXP Semiconductors
Product CategoryMOSFETFETs - ArraysFETs - Arrays
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseDFN-2020-6--
Number of Channels2 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current3.8 A--
Rds On Drain Source Resistance87 mOhms--
Vgs Gate Source Voltage12 V--
Pd Power Dissipation1.17 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReelDigi-ReelR Alternate PackagingDigi-ReelR Alternate Packaging
Transistor Type2 P-Channel--
BrandNexperia--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Unit Weight0.000254 oz--
Series---
Package Case-6-UDFN Exposed Pad6-UDFN Exposed Pad
Operating Temperature--55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Mounting Type-Surface MountSurface Mount
Supplier Device Package-6-DFN2020 (2x2)6-HUSON (2x2)
FET Type-2 P-Channel (Dual)2 P-Channel (Dual)
Power Max-515mW490mW
Drain to Source Voltage Vdss-20V30V
Input Capacitance Ciss Vds-600pF @ 10V680pF @ 15V
FET Feature-Logic Level GateLogic Level Gate
Current Continuous Drain Id 25°C-3A2.9A
Rds On Max Id Vgs-79 mOhm @ 2A, 4.5V87 mOhm @ 2.9A, 4.5V
Vgs th Max Id-1.25V @ 250μA1V @ 250μA
Gate Charge Qg Vgs-7.5nC @ 4.5V7.8nC @ 5V
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