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| PartNumber | PMDT290UCE,115 | PMDT290UC | PMDT290UCE |
| Description | MOSFET 20/20V, 800/550 mA N/P-ch Trench MOSFET | ||
| Manufacturer | Nexperia | - | NXP Semiconductors |
| Product Category | MOSFET | - | FETs - Arrays |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-666-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel, P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 800 mA | - | - |
| Rds On Drain Source Resistance | 290 mOhms, 670 mOhms | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 450 pC, 760 pC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 330 mW | - | - |
| Configuration | Dual | - | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
| Brand | Nexperia | - | - |
| Forward Transconductance Min | 1.6 S | - | - |
| Fall Time | 31 ns, 72 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 4 ns, 30 ns | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Series | - | - | Automotive, AEC-Q101, TrenchMOS |
| Package Case | - | - | SOT-563, SOT-666 |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | SOT-666 |
| FET Type | - | - | N and P-Channel |
| Power Max | - | - | 500mW |
| Drain to Source Voltage Vdss | - | - | 20V |
| Input Capacitance Ciss Vds | - | - | 83pF @ 10V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 800mA, 550mA |
| Rds On Max Id Vgs | - | - | 380 mOhm @ 500mA, 4.5V |
| Vgs th Max Id | - | - | 0.95V @ 250μA |
| Gate Charge Qg Vgs | - | - | 0.68nC @ 4.5V |