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| PartNumber | PMPB20EN,115 | PMPB20ENZ | PMPB20EN |
| Description | MOSFET 30V N-channel Trench MOSFET | MOSFET PMPB20EN/SOT1220/REEL 7" Q1/T1 | MOSFET, N CHANNEL, 30V, SOT1220, Transistor Polarity:N Channel, Continuous Drain Current Id:10.4A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0165ohm, Rds(on) Test Voltage Vgs:10V, Th |
| Manufacturer | Nexperia | Nexperia | NXP Semiconductors |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | DFN-2020MD-6 | DFN-2020MD-6 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 10.4 A | 10.4 A | - |
| Rds On Drain Source Resistance | 16.5 mOhms | 16.5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 10.8 nC | 10.8 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 3.5 W | 12.5 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Nexperia | Nexperia | - |
| Forward Transconductance Min | 8 S | 8 S | - |
| Fall Time | 8 ns | 8 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 17 ns | 17 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 9 ns | 9 ns | - |
| Typical Turn On Delay Time | 9 ns | 9 ns | - |
| Unit Weight | 0.000254 oz | - | - |