PartNumber | PMZ1000UN,315 | PMZ1000UN | PMZ1200UPE |
Description | MOSFET MOSFET N-CH | ||
Manufacturer | Nexperia | - | NXP Semiconductors |
Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | DFN-1006-3 | - | - |
Number of Channels | 1 Channel | - | 2 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 480 mA | - | - |
Rds On Drain Source Resistance | 1 Ohms | - | - |
Configuration | Single | - | Dual |
Packaging | Reel | - | Reel |
Transistor Type | 1 N-Channel | - | 2 N-Channel |
Brand | Nexperia | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 10000 | - | - |
Subcategory | MOSFETs | - | - |
Unit Weight | 0.000028 oz | - | - |
Package Case | - | - | DFN1010B-6 |
Pd Power Dissipation | - | - | 4.03 W |
Maximum Operating Temperature | - | - | + 150 C |
Minimum Operating Temperature | - | - | - 55 C |
Fall Time | - | - | 3 ns |
Rise Time | - | - | 7 ns |
Vgs Gate Source Voltage | - | - | +/- 8 V |
Id Continuous Drain Current | - | - | 590 mA |
Vds Drain Source Breakdown Voltage | - | - | 30 V |
Vgs th Gate Source Threshold Voltage | - | - | 450 mV |
Rds On Drain Source Resistance | - | - | 670 mOhms |
Typical Turn Off Delay Time | - | - | 12 ns |
Typical Turn On Delay Time | - | - | 4 ns |
Qg Gate Charge | - | - | 1.05 mC |
Forward Transconductance Min | - | - | 600 mS |
Channel Mode | - | - | Enhancement |