PSMN1R6-30BL,118 vs PSMN1R6-30MLHX vs PSMN1R6-30PL

 
PartNumberPSMN1R6-30BL,118PSMN1R6-30MLHXPSMN1R6-30PL
DescriptionMOSFET Std N-chanMOSFETMOSFET PSMN1R6-30MLH/SOT1210/mLFPAKMOSFET,N CHANNEL,30V,100A,TO-220AB, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0014ohm, Rds(on) Test Voltage Vgs:10V,
ManufacturerNexperiaNexperia-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3LFPAK33-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current100 A160 A-
Rds On Drain Source Resistance1.9 mOhms1.9 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation306 W106 W-
ConfigurationSingleSingle-
PackagingReelReel-
Transistor Type1 N-Channel--
BrandNexperiaNexperia-
Product TypeMOSFETMOSFET-
Factory Pack Quantity8001500-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.139332 oz--
Vgs th Gate Source Threshold Voltage-1.2 V-
Qg Gate Charge-41 nC-
Channel Mode-Enhancement-
Fall Time-24 ns-
Rise Time-34 ns-
Typical Turn Off Delay Time-32 ns-
Typical Turn On Delay Time-17 ns-
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