PSMN1R7-60BS,118 vs PSMN1R7-60BS vs PSMN1R7-60BS,118-CUT TAPE

 
PartNumberPSMN1R7-60BS,118PSMN1R7-60BSPSMN1R7-60BS,118-CUT TAPE
DescriptionMOSFET Std N-chanMOSFETTrans MOSFET N-CH 60V 120A 3-Pin SOT-404 (Alt: PSMN1R7-60BS)
ManufacturerNexperiaNXP-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current120 A--
Rds On Drain Source Resistance2 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge137 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation306 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReelDigi-ReelR Alternate Packaging-
Transistor Type1 N-Channel--
BrandNexperia--
Fall Time49 ns--
Product TypeMOSFET--
Rise Time56 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time115 ns--
Typical Turn On Delay Time42 ns--
Part # AliasesPSMN1R7-60BS--
Unit Weight0.139332 oz--
Series---
Package Case-TO-263-3, D2Pak (2 Leads + Tab), TO-263AB-
Operating Temperature--55°C ~ 175°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-D2PAK-
FET Type-MOSFET N-Channel, Metal Oxide-
Power Max-306W-
Drain to Source Voltage Vdss-60V-
Input Capacitance Ciss Vds-9997pF @ 30V-
FET Feature-Standard-
Current Continuous Drain Id 25°C-120A (Tc)-
Rds On Max Id Vgs-2 mOhm @ 25A, 10V-
Vgs th Max Id-4V @ 1mA-
Gate Charge Qg Vgs-137nC @ 10V-
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