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| PartNumber | PSMN2R6-60PSQ | PSMN2R6-60PS,127 | PSMN2R6-60PSQ127 |
| Description | MOSFET N-Channel MOSFET | Now Nexperia PSMN2R6-60PSQ - Power Field-Effect Transistor, 150A I(D), 60V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | |
| Manufacturer | Nexperia | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 150 A | - | - |
| Rds On Drain Source Resistance | 5.6 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4.5 V | - | - |
| Qg Gate Charge | 140 nC | - | - |
| Pd Power Dissipation | 326 W | - | - |
| Configuration | Single | - | - |
| Packaging | Tube | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Nexperia | - | - |
| Fall Time | 58 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 50 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 87 ns | - | - |
| Typical Turn On Delay Time | 32 ns | - | - |
| Unit Weight | 0.211644 oz | - | - |