PSMN4R2-30MLDX vs PSMN4R2-30MLD vs PSMN4R2-30MLD,115

 
PartNumberPSMN4R2-30MLDXPSMN4R2-30MLDPSMN4R2-30MLD,115
DescriptionMOSFET 30V N-Channel 2.4mOhm
ManufacturerNexperiaNXP Semiconductors-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSE--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseLFPAK56-5--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current70 A--
Rds On Drain Source Resistance5.7 mOhms--
Vgs th Gate Source Threshold Voltage2.2 V--
Vgs Gate Source Voltage2.2 V--
Qg Gate Charge29.3 nC--
Pd Power Dissipation65 W--
ConfigurationSingle--
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Transistor Type1 N-Channel1 N-Channel-
BrandNexperia--
Fall Time8.7 ns8.7 ns-
Product TypeMOSFET--
Rise Time18.5 ns18.5 ns-
Factory Pack Quantity1500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time12 ns12 ns-
Typical Turn On Delay Time10.1 ns10.1 ns-
Unit Weight0.001810 oz--
Package Case-LFPAK-4-
Pd Power Dissipation-65 W-
Vgs Gate Source Voltage-2.2 V-
Id Continuous Drain Current-70 A-
Vds Drain Source Breakdown Voltage-30 V-
Vgs th Gate Source Threshold Voltage-2.2 V-
Rds On Drain Source Resistance-5.7 mOhms-
Qg Gate Charge-29.3 nC-
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