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| PartNumber | PSMN7R0-100BS,118 | PSMN7R0-100BS | PSMN7R0-100ES127 |
| Description | MOSFET N-CH 100V 6.8 MOHM MOSFET | Now Nexperia PSMN7R0-100ES - Power Field-Effect Transistor, 100A I(D), 100V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | |
| Manufacturer | Nexperia | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 90 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 12 mOhms | - | - |
| Vgs Gate Source Voltage | 4.3 V | - | - |
| Pd Power Dissipation | 269 W | - | - |
| Configuration | Single | - | - |
| Packaging | Reel | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Nexperia | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.139332 oz | - | - |