PartNumber | PSMN8R5-100PSFQ | PSMN8R5-100PS | PSMN8R5-100PS127 |
Description | MOSFET PSMN8R5-100PSF SOT78/SIL3P | - Bulk (Alt: PSMN8R5-100PS127) | |
Manufacturer | Nexperia | NXP | - |
Product Category | MOSFET | FETs - Single | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-220-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 98 A | - | - |
Rds On Drain Source Resistance | 8.7 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 44.5 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 183 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Tube | Tube | - |
Transistor Type | 1 N-Channel | - | - |
Brand | Nexperia | - | - |
Fall Time | 23.6 ns | 43 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 26.8 ns | 35 ns | - |
Factory Pack Quantity | 50 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 31.5 ns | 87 ns | - |
Typical Turn On Delay Time | 16.8 ns | 20 ns | - |
Unit Weight | - | 0.211644 oz | - |
Package Case | - | TO-220-3 | - |
Pd Power Dissipation | - | 263 W | - |
Id Continuous Drain Current | - | 100 A | - |
Vds Drain Source Breakdown Voltage | - | 100 V | - |
Vgs th Gate Source Threshold Voltage | - | 4 V | - |
Rds On Drain Source Resistance | - | 22.6 mOhms | - |
Qg Gate Charge | - | 111 nC | - |