QH8KA1TCR vs QH8KA1 vs QH8KA2

 
PartNumberQH8KA1TCRQH8KA1QH8KA2
DescriptionMOSFET 30V Nch+Nch Si MOSFET
ManufacturerROHM Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTSMT-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current4.5 A--
Rds On Drain Source Resistance56 mOhms, 56 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge3 nC, 3 nC--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.4 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel--
Transistor Type2 N-Channel--
BrandROHM Semiconductor--
Forward Transconductance Min1.7 S, 1.7 S--
Fall Time3.5 ns, 3.5 ns--
Product TypeMOSFET--
Rise Time7.5 ns, 7.5 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time10 ns, 10 ns--
Typical Turn On Delay Time5 ns, 5 ns--
Part # AliasesQH8KA1--
Top