QS8K11TCR vs QS8K11 vs QS8K11TR

 
PartNumberQS8K11TCRQS8K11QS8K11TR
DescriptionMOSFET 4V Drive Nch+Nch Si MOSFET
ManufacturerROHM SemiconductorROHM-
Product CategoryMOSFETIC Chips-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTSMT-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current3.5 A--
Rds On Drain Source Resistance35 mOhms, 35 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge7 nC, 7nC--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.5 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel--
Transistor Type2 N-Channel--
BrandROHM Semiconductor--
Forward Transconductance Min2.2 S, 2.2 S--
Fall Time7 ns, 7 ns--
Product TypeMOSFET--
Rise Time25 ns, 25 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time25 ns, 25 ns--
Typical Turn On Delay Time10 ns, 10 ns--
Part # AliasesQS8K11--
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