PartNumber | QS8K21TR | QS8K2 | QS8K21 |
Description | MOSFET TRANS MOSFET NCH 45V 4A 8PIN | ||
Manufacturer | ROHM Semiconductor | - | Rohm Semiconductor |
Product Category | MOSFET | - | FETs - Arrays |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | TSMT-8 | - | - |
Number of Channels | 2 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 45 V | - | - |
Id Continuous Drain Current | 4 A | - | - |
Rds On Drain Source Resistance | 53 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 4 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 120 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 1.5 W | - | - |
Configuration | Single | - | 1 N-Channel |
Channel Mode | Enhancement | - | Enhancement |
Packaging | Reel | - | Tape & Reel (TR) |
Series | QS8K21 | - | QS8K21 |
Transistor Type | 2 N-Channel | - | 1 N-Channel |
Brand | ROHM Semiconductor | - | - |
Forward Transconductance Min | - | - | - |
Development Kit | - | - | - |
Fall Time | 7 ns | - | 7 ns |
Product Type | MOSFET | - | - |
Rise Time | 25 ns | - | 25 ns |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 30 ns | - | 30 ns |
Typical Turn On Delay Time | 9 ns | - | 9 ns |
Part # Aliases | QS8K21 | - | - |
Package Case | - | - | 8-SMD, Flat Lead |
Operating Temperature | - | - | 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | TSMT8 |
FET Type | - | - | 2 N-Channel (Dual) |
Power Max | - | - | 550mW |
Drain to Source Voltage Vdss | - | - | 45V |
Input Capacitance Ciss Vds | - | - | 460pF @ 10V |
FET Feature | - | - | Logic Level Gate |
Current Continuous Drain Id 25°C | - | - | 4A |
Rds On Max Id Vgs | - | - | 53 mOhm @ 4A, 10V |
Vgs th Max Id | - | - | 2.5V @ 1mA |
Gate Charge Qg Vgs | - | - | 5.4nC @ 5V |
Pd Power Dissipation | - | - | 1.5 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 4 A |
Vds Drain Source Breakdown Voltage | - | - | 45 V |
Vgs th Gate Source Threshold Voltage | - | - | 4 V |
Rds On Drain Source Resistance | - | - | 53 mOhms |
Qg Gate Charge | - | - | 120 nC |
Forward Transconductance Min | - | - | - |