QSL11TR vs QSL10 vs QSL11

 
PartNumberQSL11TRQSL10QSL11
DescriptionBipolar Transistors - BJT TRANS GP BJT PNP 30V 1A 5PIN
ManufacturerROHM Semiconductor-ROHM Semiconductor
Product CategoryBipolar Transistors - BJT-Transistors - Bipolar (BJT) - RF
RoHSY--
Mounting StyleSMD/SMT-SMD/SMT
Transistor PolarityPNP-PNP
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max30 V--
Collector Base Voltage VCBO30 V--
Emitter Base Voltage VEBO6 V--
Maximum DC Collector Current1 A-1 A
Gain Bandwidth Product fT320 MHz-320 MHz
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesQSL11-QSL11
DC Current Gain hFE Max270 at 100 mA, 2 V-270 at 100 mA at 2 V
Height0.85 mm--
Length2.9 mm--
PackagingReel-Reel
Width1.6 mm--
BrandROHM Semiconductor--
DC Collector/Base Gain hfe Min270 at 100 mA, 2 V--
Pd Power Dissipation1.25 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # AliasesQSL11--
Package Case--TSMT
Pd Power Dissipation--1.25 W
Collector Emitter Voltage VCEO Max--30 V
Collector Base Voltage VCBO--30 V
Emitter Base Voltage VEBO--6 V
DC Collector Base Gain hfe Min--270 at 100 mA at 2 V
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