PartNumber | R6011ENJTL | R6011ENX | R6011END3TL1 |
Description | MOSFET 10V Drive Nch MOSFET | MOSFET 10V Drive Nch MOSFET | MOSFET NCH 600V 11A POWER MOSFET |
Manufacturer | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | Through Hole | SMD/SMT |
Package / Case | TO-263-3 | TO-220FP-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
Id Continuous Drain Current | 11 A | 11 A | 11 A |
Rds On Drain Source Resistance | 340 mOhms | 340 mOhms | 390 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
Vgs Gate Source Voltage | 30 V | 30 V | 20 V |
Qg Gate Charge | 32 nC | 32 nC | 32 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 124 W | 53 W | 124 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Reel |
Series | Super Junction-MOS EN | Super Junction-MOS EN | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor |
Fall Time | 35 ns | 35 ns | 35 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 40 ns | 40 ns | 40 ns |
Factory Pack Quantity | 1000 | 500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 90 ns | 90 ns | 90 ns |
Typical Turn On Delay Time | 25 ns | 25 ns | 25 ns |
Part # Aliases | R6011ENJ | R6011ENX | - |
Unit Weight | 0.077603 oz | 0.000353 oz | - |