R8005ANX vs R8005ANJFRGTL vs R8005ANJ

 
PartNumberR8005ANXR8005ANJFRGTLR8005ANJ
DescriptionMOSFET 10V Drive Nch MOSFETMOSFET Nch 800V Vdss 5A ID TO-263(D2PAK); LPTS
ManufacturerROHM SemiconductorROHM Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySi--
Mounting StyleThrough HoleSMD/SMT-
Package / CaseTO-220FP-3TO-263S-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage800 V800 V-
Id Continuous Drain Current5 A5 A-
Rds On Drain Source Resistance2.08 Ohms2.1 Ohms-
Vgs th Gate Source Threshold Voltage3 V3 V-
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge21 nC20 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation40 W120 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height4.8 mm--
Length15.4 mm--
ProductMOSFET--
SeriesR8005ANX--
Transistor Type1 N-channel1 N-Channel-
TypePower MOSFET--
Width10.3 mm--
BrandROHM SemiconductorROHM Semiconductor-
Forward Transconductance Min1 S1 S-
Fall Time41 ns27 ns-
Product TypeMOSFETMOSFET-
Rise Time17 ns30 ns-
Factory Pack Quantity5001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time37 ns50 ns-
Typical Turn On Delay Time17 ns25 ns-
Part # AliasesR8005ANX--
Unit Weight0.211644 oz--
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