RE1L002SNTL vs RE1L002SN vs RE1L002SN-E

 
PartNumberRE1L002SNTLRE1L002SNRE1L002SN-E
DescriptionMOSFET RECOMMENDED ALT 755-RSM002N06T2L
ManufacturerROHM Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-416FL-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current250 mA--
Rds On Drain Source Resistance2.4 Ohms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation150 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Transistor Type1 N-Channel MOSFET--
BrandROHM Semiconductor--
Fall Time28 ns--
Product TypeMOSFET--
Rise Time5 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time18 ns--
Typical Turn On Delay Time3.5 ns--
Part # AliasesRE1L002SN--
Unit Weight0.000212 oz--
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