RGW60TK65DGVC11 vs RGW60TS65DGC11 vs RGW60TK65GVC11


PartNumber	RGW60TK65DGVC11	RGW60TS65DGC11	RGW60TK65GVC11
Description	IGBT Transistors 650V 30A TO-3PFM Field Stp Trnch IGBT	IGBT Transistors 650V 30A TO-247N Field Stp Trnch IGBT	IGBT Transistors 650V 30A TO-3PFM Field Stp Trnch IGBT
Manufacturer	ROHM Semiconductor	ROHM Semiconductor	ROHM Semiconductor
Product Category	IGBT Transistors	IGBT Transistors	IGBT Transistors
RoHS	Y	Y	Y
Technology	Si	Si	Si
Package / Case	TO-3PFM	TO-247N-3	TO-3PFM
Mounting Style	Through Hole	Through Hole	Through Hole
Configuration	Single	Single	Single
Collector Emitter Voltage VCEO Max	650 V	650 V	650 V
Collector Emitter Saturation Voltage	1.5 V	1.5 V	1.5 V
Maximum Gate Emitter Voltage	30 V	30 V	30 V
Continuous Collector Current at 25 C	33 A	60 A	33 A
Pd Power Dissipation	72 W	178 W	72 W
Minimum Operating Temperature	- 40 C	- 40 C	- 40 C
Maximum Operating Temperature	+ 175 C	+ 175 C	+ 175 C
Packaging	Tube	Tube	Tube
Continuous Collector Current Ic Max	33 A	60 A	33 A
Brand	ROHM Semiconductor	ROHM Semiconductor	ROHM Semiconductor
Gate Emitter Leakage Current	200 nA	200 nA	200 nA
Product Type	IGBT Transistors	IGBT Transistors	IGBT Transistors
Subcategory	IGBTs	IGBTs	IGBTs