RHP020N06T100 vs RHP020N06 vs RHP020N06 , PZTM1101

 
PartNumberRHP020N06T100RHP020N06RHP020N06 , PZTM1101
DescriptionMOSFET N-CH 60V 200MA
ManufacturerROHM Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-89-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current2 A--
Rds On Drain Source Resistance200 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge7 nC--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.5 mm--
Length4.5 mm--
SeriesRHP020N06--
Transistor Type1 N-Channel MOSFET--
TypeMOSFET--
Width2.5 mm--
BrandROHM Semiconductor--
Fall Time18 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time22 ns--
Typical Turn On Delay Time7 ns--
Part # AliasesRHP020N06--
Unit Weight0.004603 oz--
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