RJK6024DP3-A0#J2 vs RJK6024DP3 vs RJK6024DPD

 
PartNumberRJK6024DP3-A0#J2RJK6024DP3RJK6024DPD
DescriptionMOSFET MOSFET
ManufacturerRenesas Electronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-4--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current400 mA--
Rds On Drain Source Resistance28 Ohms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge4.3 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.04 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
SeriesRJK6024--
Transistor Type1 N-Channel--
BrandRenesas Electronics--
Fall Time77 ns--
Product TypeMOSFET--
Rise Time14.5 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time48 ns--
Typical Turn On Delay Time30 ns--
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