RMP4N60LD-T vs RMP4N60IP vs RMP4N60LD

 
PartNumberRMP4N60LD-TRMP4N60IPRMP4N60LD
DescriptionMOSFET D-PAK MOSFETMOSFET TO-251 MOSFET
ManufacturerRectronRectron-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTThrough Hole-
Package / CaseTO-252-3TO-251-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current4 A4 A-
Rds On Drain Source Resistance2.5 Ohms2.5 Ohms-
Vgs th Gate Source Threshold Voltage2 V2 V-
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge20 nC20 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation51 W51 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelTube-
Transistor Type1 N-Channel1 N-Channel-
BrandRectronRectron-
Forward Transconductance Min4 S4 S-
Fall Time38 ns38 ns-
Product TypeMOSFETMOSFET-
Rise Time48 ns48 ns-
Factory Pack Quantity2500800-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time48 ns48 ns-
Typical Turn On Delay Time16 ns16 ns-
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